Resistance change memory device

ABSTRACT

A resistance change memory device including: a cell array having a resistance change type of memory cells disposed at the cross-points of word lines and bit lines, the resistance value of the memory cell being reversibly settable; a word line driver circuit configured to apply a selecting drive voltage to one selected in the word lines; and a bit line driver circuit configured to drive multiple bit lines in such a manner that a set mode and a reset mode are set simultaneously for multiple memory cells selected by the selected word line, the set mode being for changing a selected memory cell from a first resistance state into a second resistance state while the reset mode is for changing a selected memory cell from the second resistance state into the first resistance state.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of and claims the benefit of priorityunder 35 U.S.C. §120 from U.S. Ser. No. 12/987,201 filed Jan. 10, 2011,which is a division of U.S. Ser. No. 12/245,152 filed Oct. 3, 2008 (nowU.S. Pat. No. 7,885,121 issued Feb. 8, 2011), and claims the benefit ofpriority under 35 U.S.C. §119 from Japanese Patent Application No.2007-261435 filed Oct. 5, 2007, the entire contents of each of which areincorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to a resistance change memory device.

2. Description of the Related Art

Recently, it is noticed that a resistance change memory (ReRAM) succeedsto a conventional flash memory. The resistance change memory stores aresistance value state as data, which is reversibly changed by applyingvoltage, current, heat and the like, in the recording layer. Theresistance change memory is suitable for shrinking the cell size, andfor constituting a cross-point cell array. In addition, it is easy tostack cell arrays.

It is known that a variable resistance element used in a ReRAM has twotypes of operation modes. One is a bipolar type. In this type of ReRAMs,a high resistance state and a low resistance state are selectively setby exchanging the polarity of applying voltage. The other is a unipolartype. In this type of ReRAMs, it is possible to selectively set a highresistance state and a low resistance state by controlling the voltageapplying time without exchanging the polarity of the applying voltage(for example, refer to Y. Hosoi et al, “High Speed Unipolar SwitchingResistance RAM (RRAM) Technology” IEEE International Electron DevicesMeeting 2006, Technical Digest, P. 793-796).

In the unipolar type of ReRAMs with a cross-point type of cell array,two operations are settable in accordance with combinations of voltagesand applying times thereof as follows: one is for obtaining a lowresistance value state from a high resistance value state (i.e., set orwrite operation); and the other is for obtaining a high resistance valuestate from a low resistance value state (i.e., reset or eraseoperation). Therefore, it is difficult to make a cell be in a setoperation mode and make another cell be in a reset operation modesimultaneously, within plural cells selected by a selected word line.

With respect to a ReRAM having a cross-point type of cell array, therehas already been proposed such a write scheme that identical data arewritten in multiple bits as data pattern used for estimating the memoryfunction (for example, refer to JP-A-2006-323924).

SUMMARY OF THE INVENTION

According to an aspect of the present invention, there is provided aresistance change memory device including:

a cell array having a plurality of word lines disposed in parallel, aplurality of bit lines disposed to cross the word lines and a resistancechange type of memory cells disposed at the cross-points of the wordlines and the bit lines, the resistance value of the memory cell beingreversibly settable;

a word line driver circuit configured to apply a selecting drive voltageto one selected in the word lines; and

a bit line driver circuit configured to drive multiple bit lines in sucha manner that a set mode and a reset mode are set simultaneously formultiple memory cells selected by the selected word line, the set modebeing for changing a selected memory cell from a first resistance valuestate into a second resistance value state while the reset mode is forchanging a selected memory cell from the second resistance value stateinto the first resistance value state.

According to another aspect of the present invention, there is provideda resistance change memory device including:

a cell array including a plurality of word lines disposed in parallel, aplurality of bit lines disposed to cross the word lines and a resistancechange type of memory cells disposed at the cross-points of the wordlines and the bit lines, the resistance value of the memory cell beingchanged between a set state and a reset state;

a bit line driver circuit configured to select one of a set-use pulsevoltage, a reset-use pulse voltage and a mask-use voltage and supply theselected voltages to the respective bit lines; and

a word line driver circuit configured to select at least one of the wordlines and supply a word line drive pulse voltage to the selected wordline, wherein

the memory cell is changed from the reset state into the set state underthe condition that the set-use pulse voltage and the word line drivepulse voltage are applied simultaneously, and changed from the set stateinto the reset state under the condition that the reset-use pulsevoltage and the word line drive pulse voltage are appliedsimultaneously, while the memory cell is kept in the present state underthe condition that the mask-use pulse voltage and the word line drivepulse voltage are applied simultaneously.

According to still another aspect of the present invention, there isprovided a resistance change memory device including:

a cell array including a plurality of first lines disposed in parallel,a plurality of second lines disposed to cross the first lines and aresistance change type of memory cells disposed at the cross-points ofthe first lines and the second lines, the resistance value of the memorycell being changed between a set state and a reset state;

a first line driver circuit configured to select one of a set-use pulsevoltage, a reset-use pulse voltage and a mask-use voltage and supply theselected voltages to the respective first lines; and

a second line driver circuit configured to select at least one of thesecond lines and supply a second line drive pulse voltage to it, wherein

the memory cell is changed from the reset state into the set state underthe condition that the set-use pulse voltage and the second line drivepulse voltage are applied simultaneously, and changed from the set stateinto the reset state under the condition that the reset-use pulsevoltage and the second line drive pulse voltage are appliedsimultaneously, while the memory cell is kept in the present state underthe condition that the mask-use pulse voltage and the second line drivepulse voltage are applied simultaneously.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows an equivalent circuit of a cell array in a resistancechange memory device in accordance with an embodiment.

FIG. 2 shows a three-dimensionally stacked cell array.

FIG. 3 shows set and reset voltage waveforms applied to the variableresistance element of a memory cell.

FIG. 4 shows a cell array driver circuit in the embodiment.

FIG. 5 shows set, reset and mask operations waveforms in the embodiment.

FIG. 6 shows a cell array configuration in accordance with anotherembodiment.

FIG. 7 shows set, reset and mask operations waveforms in the embodiment.

FIG. 8 shows a cell array driver circuit in another embodiment.

FIG. 9 shows set, reset and mask operations waveforms in the embodiment.

FIG. 10 shows an operation mode selecting state with the word line andthe bit line in the embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Illustrative embodiments of this invention will be explained withreference to the accompanying drawings below.

Embodiment 1

FIG. 1 shows an equivalent circuit of a cell array of a resistancechange memory in accordance with an embodiment. Bit lines BL (BL1, BL2,. . . ) and word lines WL (WL1, WL2, . . . ) are disposed to cross eachother, and memory cells MC (MC11, MC12, . . . , MC21, MC22, . . . ) aredisposed at the respective cross-points of the bit lines BL and wordlines WL.

Memory cell MC is formed of a variable resistance element VR and a diodeDi connected in series. Variable resistance element VR stores aresistance value as data in a non-volatile manner, which is reversiblysettable with an electrical or thermal process. Although the detailedlayout is not shown, for example, diode Di and variable resistanceelement VR are stacked on word lines WL, and bit lines BL are formedthereon in perpendicular to the word lines WL.

To achieve a resistance change memory with a large capacity, as shown inFIG. 2, multiple cell arrays are stacked to constitute athree-dimensional (3D-) cell array. In the example shown here, four cellarrays CA0-CA3 are stacked above a silicon substrate 21. Word lines WLin the respective cell arrays are coupled in common to via-wirings 24and drawn to word line driver circuit 23 formed on the silicon substrate21. Bit lines BL in the respective cell arrays are coupled independentlyof each other to bit line select circuit/sense amplifier circuit 22formed on the silicon substrate 21 through via-wirings 25.

Variable resistance element VR has a recoding layer formed of a kind oftransition metal oxide. FIG. 3 shows an example of set/reset voltagewaveforms used in a unipolar operation of the variable resistanceelement VR. It is assumed in the variable resistance element VR shownhere that a thermally stable high resistance state is referred to as a“reset state”, and it may be changed into a low resistance state (i.e.,“set state”) with a certain voltage V1 applied for a certain time T1(set operation). By contrast, the variable resistance element VR in thelow resistance state may be changed into the high resistance state(i.e., set operation) due to Joule's heat generated in the device basedon a large current carried therein when voltage V2 (<V1) is applied fortime T2 (>T1).

That is, it is assumed in this example that the set operation of thevariable resistance element VR is achieved as a voltage process whilethe reset operation is achieved as a thermal process. Note here that thedefinition of the set and reset operations are relative. For example, inaccordance with what material is used as the recording layer of thevariable resistance element, a low resistance state becomes a thermallystable state, which may be defined as a reset state.

In this embodiment, the set and reset operations explained withreference to FIG. 3 are used basically, and it is made possible toexecute set and reset operations simultaneously for multiple memorycells which are arranged on a word line in the cell array configurationshown in FIG. 1.

FIG. 4 shows a driving circuit of the cell array. Disposed on the sideof word lines WLi is a word line driver circuit 30, which has word linedecoder 31 for selecting a word line and word line driver 32 forsupplying a driving voltage to a selected word line.

Disposed on the side of bit lines BLj is a bit line driver circuit 33configured to be able to apply a set-use pulse voltage and a reset-usepulse voltage to different cells simultaneously. The bit line drivercircuit 33 has data registers 33 a (33 a 0, 33 a 1, . . . ) disposed forthe respective bit lines to store write data, multiplexers 33 b (33 b 0,33 b 1, . . . ) controlled by the write data, and transistors Q1-Q3driven by the outputs of the multiplexers.

One ends of transistors Q1-Q3 are coupled in common to each bit line BLiwhile the other ends are coupled to mask-use voltage signal line 36,set-use voltage signal line 35 and reset-use voltage signal line 34,respectively. These mode setting voltage signal lines 34-36 are disposedto be shared by the bit lines.

Data register 33 a is used as a mode selecting circuit such as to decidewhich of set and reset operations is adapted to a bit line, or select amask operation for keeping a memory cell as it is in the presentresistance value state. In detail, data register 33 a stores write dataformed of two bits for designating three operation modes, for example,as follows: (10) designates the set mode; (01) the reset mode; and (11)the mask mode for keeping a cell as it is. In accordance with this writedata, multiplexer 33 b selectively turns on set-use transistor Q2,reset-use transistor Q3 or mask-use transistor Q1.

FIG. 4 shows such a case that memory cells MC10, MC11, MC13 and MC14disposed on the bit lines BL0, BL1, BL2 and BL3 are selected by aselected word line WL1 and subjected to reset, set, mask and resetmodes, respectively.

FIG. 5 shows voltage waveforms applied to a selected word line WL andselected bit lines with respect to the respective modes of set, resetand mask operations. The selected word line is selected by the decoder31 and applied with such a step-shaped voltage that is generated fromthe driver 32 to be composed of pulse voltage Vw1 with pulse width T1and pulse voltage Vw2 (<Vw1) stepped-down from Vw1 with pulse width T2(>T1).

Applied to the set and reset voltage signal lines 35 and 34 are negativepulse (i.e., set-use pulse voltage) P1 with pulse width T1, which swingsfrom the basic level Vdd to Vss, and negative pulse (i.e., reset-usepulse voltage) P2 with pulse width T2, which swings from the basic levelVdd to a medium level Vm (>Vss), respectively. Mask-use signal line 36is kept at the basic level of the set-use and reset-use pulse, Vdd(i.e., mask-use voltage).

In accordance with data registers 33 a, transistor Q2 is turned on forthe set mode bit line BL1; transistor Q3 is turned on for the reset modebit line BL0, BL3; and transistor Q1 is turned on for mask mode bit lineBL2, so that these bit lines are applied with set-use pulse P1;reset-use pulse P2; and mask-use voltage Vdd, respectively. It should benoted that transition timings of the word line and the bit lines aremade to be synchronized.

Word line and bit line voltages in the set, reset and mask modes areshown in FIG. 5. That is, set mode cell MC11 is applied with voltage Vw1that is defined as a difference between word line voltage Vw1 and bitline negative pulse P1 (=Vss). Assuming that the forward directionvoltage drop of the diode Di of the memory cell is neglected, and thevoltage between the word line and the bit line is applied to thevariable resistance element VR as it is, memory cell MC11 will bechanged into the low resistance state through the voltage process withvoltage Vw1 and time T1 set to be in a suitable level and a suitabletime length necessary for the set operation.

In the reset mode memory cells MC10 and MC13, the differential voltageapplied to the variable resistance element is in a range of(Vw1−Vm)˜(Vw2−Vm), and the voltage applying time is T2. Assuming thatthese voltage and time are set to be in a suitable state necessary forthe reset operation, the reset operation will be performed through theheat process for memory cells MC10 and MC13.

In the mask mode memory cell MC12, applied voltage is in a range of(Vw1−Vdd)˜(Vw2−Vdd), and the voltage applying time is T2. Assuming thatthese voltage and time are insufficient for the reset or set operation,memory cell MC12 maintains the present data state as it is.

During the above-described operation, non-selected word lines are keptat Vss. Since the set and reset use negative pulses P1 and P2 applied tobit lines are selected in such levels that set or reset does not occureven if these levels are applied to a bit line, non-selected cells arekept in the present data state.

As described above, according to this embodiment, multiple cellsarranged along a selected word line may be subjected simultaneously toset, reset and mask mode.

Embodiment 2

FIG. 6 shows another cell array arrangement, in which the diode polarityis reversed to that shown in FIG. 1. That is, in this case, when a bitline is relatively higher than a word line, a memory cell is selected atthe cross-point of the word line and the bit line. In this case, voltagewaveforms in the set, reset and mask modes are shown in FIG. 7 incomparison with those shown in FIG. 5.

That is, a selected word line is applied with a composite pulse composedof a negative pulse with pulse width T1, which swings from the basiclevel Vdd to Vss, and another negative pulse with pulse width T2, whichswings from the basic level Vdd to a medium level Vm (Vdd>Vm>Vss). Bitline BL is applied with: set-use pulse P1′, which is positive voltageVw1 with pulse width T1 on the basic level Vss, in the set mode;reset-use pulse P2′, which is positive voltage Vw2 with pulse width T2on the basic level Vss, in the reset mode; and Vss in the mask mode.

As a result, multiple cells arranged along the selected word line may besubjected simultaneously to set, reset and mask modes as similar to theabove-described embodiment.

Embodiment 3

FIG. 8 shows another embodiment, in which it is made possible to write acertain data pattern in multiple memory cells in a two-dimensional cellarray at once. The cell array configuration (i.e., diode polarity) isthe same as in the embodiment 1. Word line driver circuit 71 has modeselecting circuits 71 a (71 a 0, 71 a 1, . . . ) disposed for therespective word lines and multiplexers 71 b (71 b 0, 71 b 1, . . . )controlled by the mode selecting circuits 71 a, as similar to the bitline driver circuit.

In detail, the mode selecting circuit 71 a is for selecting data writingmode (including set and reset modes) and mask mode, and formed of a dataregister storing one bit data. Write-use voltage signal line 76 andmask-use voltage signal line 77 are prepared to be shared by the pluralword lines, and these signal lines are selectively coupled to word linesWL via transistors Q4 or Q5 driven by the multiplexers 71 b, so thatwrite-use voltage (i.e., selecting drive voltage) and mask-use voltage(i.e., non-selecting voltage) are supplied to selected word lines andnon-selected word lines, respectively.

Bit line driver circuit 33 is formed as similar to that in theembodiment 1, and has mode selecting circuits 33 a, multiplexers 33,reset-, set- and mask-use signal lines 34, 35 and 36, and transistorsQ1-Q3, which are driven by the multiplexers 33 to be turned on or off.

FIG. 9 shows voltage waveforms applied to word line WL and bit line BL.On the word line side, when a write mode (set or reset mode) isselected, transistor Q5 becomes on, so that a selected word line isapplied with a composite pulse composed of set-use positive pulsevoltage Vw1 with pulse width T1 and reset-use positive pulse voltage Vw2(<Vw1) with pulse width T2 (>T1). With respect to a mask mode selectedword line, transistor Q4 is turned on, and Vss is applied to the wordline. Except that plural word lines are set simultaneously in the set,reset and mask modes simultaneously, voltage level and pulse widthsetting is the same as in the embodiment 1.

By contrast, on the bit line side, bit lines are applied with thesimilar voltages as in the embodiment 1 in accordance with modes, asfollows: negative pulse voltage P1 (pulse width T1), which swings to Vssfrom the basic level Vdd, is applied in the set mode; negative pulsevoltage P2 (pulse width T2), which swings to medium level Vm from thebasic level Vdd, in the reset mode; and Vss in the mask mode.

Like in the embodiment 1, in case a selected word line is in the writemode (“write”), and a selected bit line is in the set mode (“set”), theselected memory cell is applied with pulse voltage Vw1 for time T1 andsubjected to the set operation. In case a selected word line is in thewrite mode (“write”), and a selected bit line is in the reset mode(“reset”), the selected memory cell is applied with pulse voltage in therange of (Vw1−Vm)˜(Vw2−Vm) for time T2 and subjected to the resetoperation.

In case a word line is kept at Vss in the mask mode, or a bit line iskept at Vdd in the mask mode, memory cells arranged on the word line andthe bit line are in the mask mode, in which cell's states are kept as itis, because the cell's voltage condition is insufficient for a set or areset operation.

FIG. 10 shows the above-described mode states selected with word line WLand bit line BL.

In the detailed example shown in FIG. 8, word lines WL0, WL1, WL2 andWL4 are in the write mode while word line WL3 is in the mask mode. Inaddition, bit lines BL0, BL3 are in the reset mode; bit line BL1 in theset mode; and bit line BL2 in the mask mode. In this case, all cellsarranged along the word line WL3 are in the mask mode, and all cellsarranged along the bit line BL2 are also in the mask mode. Exceptingthese cells set in the mask mode, memory cells arranged on the bit linesBL0 and BL3 selected in the reset mode are set in the reset mode whilememory cells arranged on the bit line BL1 selected in the set mode areset in the set mode.

As described above, according to this embodiment, setting plural wordlines in a write state, it becomes possible to subject plural memorycells selected by each word line to the set, reset and mask operationsin accordance with bit line selection modes. Explaining in other words,it becomes possible to write the same data in the plural memory cellsdisposed on a bit line and selected by different word lines.

Therefore, this embodiment is effective, for example, in such a casethat a ReRAM is subjected to a test with a test data pattern such as all“0”, all “1”, a checker pattern and the like.

This invention is not limited to the above-described embodiment. It willbe understood by those skilled in the art that various changes in formand detail may be made without departing from the spirit, scope, andteaching of the invention.

What is claimed is:
 1. A resistance change memory device comprising: acell array including a plurality of first lines disposed in parallel, aplurality of second lines disposed to cross the first lines and aresistance change type of memory cells disposed at the cross-points ofthe first lines and the second lines, the resistance value of the memorycell being changed between a set state and a reset state; a first linedriver circuit configured to select one of a set-use pulse voltage, areset-use pulse voltage and a mask-use voltage and supply the selectedvoltages to the respective first lines; and a second line driver circuitconfigured to select at least one of the second lines and supply asecond line drive pulse voltage to it, wherein the memory cell ischanged from the reset state into the set state under the condition thatthe set-use pulse voltage and the second line drive pulse voltage areapplied simultaneously, and changed from the set state into the resetstate under the condition that the reset-use pulse voltage and thesecond line drive pulse voltage are applied simultaneously, while thememory cell is kept in the present state under the condition that themask-use pulse voltage and the second line drive pulse voltage areapplied simultaneously.
 2. The resistance change memory device accordingto claim 1, wherein the first line driver circuit comprises: firstvoltage signal lines disposed to be shared by the first lines, andgenerate the set-use pulse voltage, the reset-use pulse voltage and themask-use voltage used for keeping a memory cell in the presentresistance value state; and first multiplexers disposed for therespective first lines, the first multiplexer selecting one of the firstvoltage signal lines and supplying one of the set-use pulse voltage, thereset-use pulse voltage and the mask-use voltage to the first line. 3.The resistance change memory device according to claim 2, wherein thefirst line driver circuit further comprises: three transistors disposedfor the respective first lines and between the first signal voltagelines and the first line, respectively, the three transistors beingdriven by the first multiplexer to connect one of the first signalvoltage lines to the first line.
 4. The resistance change memory deviceaccording to claim 2, the first line driver circuit further comprises:data registers disposed for the respective first lines to store writedata and controlling the first multiplexers.
 5. The resistance changememory device according to claim 1, wherein the set-use pulse voltagehas a first pulse width and a first pulse height while the reset-usepulse voltage has a second pulse width longer than the first pulse widthand a second pulse height lower than the first pulse height.
 6. Theresistance change memory device according to claim 1, wherein the secondline driver circuit comprises: second voltage signal lines disposed tobe shared by the second lines, and generate two kinds of voltages, thesecond line drive pulse voltage and a non-selecting voltage to besupplied to a non-selected second line; and second multiplexers disposedfor the respective second lines, the second multiplexer selecting one ofthe second voltage signal lines and supplying one of the two kinds ofvoltages to a second line.
 7. The resistance change memory deviceaccording to claim 6, wherein the second line driver circuit furthercomprises: two transistors disposed for the respective second lines andbetween the second signal voltage lines and the second line,respectively, the two transistors being driven by the second multiplexerto connect one of the second signal voltage lines to the second line. 8.The resistance change memory device according to claim 1, the secondline driver circuit further comprises: mode selecting circuit disposedfor the respective second lines to control the second multiplexer. 9.The resistance change memory device according to claim 6, wherein thesecond line drive pulse voltage is a step-shaped voltage composed of afirst drive pulse voltage and a second drive pulse voltage, wherein thefirst drive pulse voltage has a third pulse width and a third pulseheight while the second drive pulse voltage has a fourth pulse widthlonger than the third pulse voltage and a fourth pulse height lower thanthe third pulse height.
 10. The resistance change memory deviceaccording to claim 1, wherein a plurality of the cell arrays arethree-dimensionally stacked.